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2 article(s) from Rauschenbach, Bernd

Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

Susann Liedtke,
Christoph Grüner,
Jürgen W. Gerlach and
Bernd Rauschenbach

Beilstein J. Nanotechnol. 2018, 9, 954–962, doi:10.3762/bjnano.9.89

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Figure 1: Cross-sectional (top) and top-view (bottom) SEM images of tilted Al columns deposited at an inciden...

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Figure 2: (a) Calculated in-plane pole figures for the cubic Al{200} and (b) Al{111} planes in a vertically (...

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Figure 3: Schematic illustration of a tilted Al column deposited on a thermally oxidized Si substrate at an o...

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Figure 4: Cross-sectional SEM images of tilted metallic columns deposited at an incidence angle of 82° on the...

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Figure 5: Column tilt angles of (a) low-melting metals Al, Ni and (b) high-melting metals Ta, Mo and Cr depos...

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Figure 6: β_θ=90°-values for Ta, Mo and Al columns depending on the homologous temperature (for explanation se...

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Figure 7: Porosity of (a) Ta, Mo and Cr and (b) Ni and Al thin films versus incidence angle.

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Full Research Paper

Published 22 Mar 2018

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Nanometer-resolved mechanical properties around GaN crystal surface steps

Jörg Buchwald,
Marina Sarmanova,
Bernd Rauschenbach and
Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

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Figure 1: MD configuration of a GaN step with a step height of h = 2c during indentation of surface atoms wit...

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Figure 2: Stress fluctuation multiplied by the squared per-atom volume [Graphic 3] along the y-axis of the upper Ga atom...

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Figure 3: Local [001]-oriented indentation modulus for three different step heights along the y-axis. Measure...

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Figure 4: [001]-oriented indentation modulus for three different step heights along y. Measured by indenting ...

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Figure 5: Schematic FEM configuration of the indentation on top of the step by using a flatpunch indenter.

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Figure 6: FEM simulation of indentation modulus for three different step heights by using a flatpunch indente...

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Figure 7: Topography (a) and indentation modulus (b) map of the area around a GaN step.

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Full Research Paper

Published 19 Nov 2014

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